Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency
نویسندگان
چکیده
We report the development of Al0.7Ga0.3N /AlN quantum wells with high internal quantum efficiency. All samples had identical well and barrier thickness but the III/V flux ratio was varied during growth by increasing the Ga flux. The luminescence spectra show single peaks which vary from 220 nm III /V 1 to 250 nm III /V 1 with internal quantum efficiency varying from 5% to 50%, respectively. To account for these results, a growth model was proposed in which at III /V 1 the growth proceeds via vapor phase epitaxy, while at III /V 1 the growth proceeds via liquid phase epitaxy. © 2009 American Institute of Physics. DOI: 10.1063/1.3130755
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